SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth

Selective Epitaxial Growth of Silicon for Vertical Diode Application

Selectivity control in silicon selective epitaxial growth (SEG) for deep contact patterns, which is one of the key processes for silicon-based stacked devices and cell switches for next generation memories, was studied. Absolute values of selectivity loss during silicon SEG using the most popular H2/dichlorosilane (DCS)/HCl gas system were evaluated using a commercialized inspection tool in 200...

single-step synthesis of multi-component spirobarbiturates using ionic liquids and synthesis of substituted pyridine filled with catalysts supported on solid substrate

in this thesis, a better reaction conditions for the synthesis of spirobarbiturates catalyzed by task-specific ionic liquid (2-hydroxy-n-(2-hydroxyethyl)-n,n-dimethylethanaminium formate), calcium hypochlorite ca(ocl)2 or n-bromosuccinimide (nbs) in the presence of water at room temperature by ultrasonic technique is provided. the design and synthesis of spirocycles is a challenging task becaus...

Vertical SiGe Epitaxial Growth System

OVERVIEW: The increasing sophistication of home electronics and telecommunication devices is propelling the demand for improved semiconductor devices. The SiGe (silicon germanium)-HBT (hetero-junction bipolar transistor) can realize high-speed operation, low noise, and low power consumption, therefore, its expected application to radio frequency IC communication devices is predicted to grow rap...

Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1)

Epitaxial Growth and Characterization of SiC for High Power Devices

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